获得多孔硅蓝绿光发射的新方法  

A New Method to Achieve the Blue/Green Light Emitting from Porous Silicon

作　　者：李谷波[1] 张甫龙[2] 范洪雷[2] 陈华杰[2] 俞鸣人 侯晓远[2] 

机构地区：[1]四川工业学院电子信息与电气工程系物理中心实验室,四川成都610039 [2]复旦大学应用表面物理国家重点实验室,上海200433

出　　处：《四川工业学院学报》2000年第2期132-135,共4页Journal of Sichuan University of Science and Technology

基　　金：国家自然科学基金

摘　　要：对多孔硅进行“胺液浸泡 +快速热氧化”处理 ,光致发光谱显示 ,经处理样品的发光峰值波长短到 5 0 0nm ,而且在干燥空气中存放 160d后 ,发光强度变化很小。红外吸收谱表明 ,处理后的多孔硅的主要成分是硅和氧 ,胺液没有在发蓝绿光的样品中留下残迹 ,电子自旋共振谱表明 ,这种蓝绿光样品有相当低的悬挂键密度。这些结果揭示 ,量子限制效应和表面态在多孔硅蓝绿光发射中起着关键性的作用。这种制备发蓝绿光样品的方法简单易行 ,成功率可达 70 %。After the treatment of porous Si by “amine immersion and rapid thermal oxidation”,the peak position of the photoluminescence spectra has a blue shift to 500 nm Only a little change in photoluminescence was observed after 160d storing in dry air FTIR spectra indicate that the compositions of such treated sample are mainly silicon and oxygen ESR signal shows that the blue/green light emitting sample has rather low density of dangling bonds These results demonstrate that the quantum confinement effect and surface states play a key role in blue/green light emitting This method is simple and practicable,to make blue/green light emitting samples and its success ratio can achieve 70%

关 键 词：多孔硅 光发射 快速热氧化 蓝光发射 绿光发射 

分 类 号：TN204[电子电信—物理电子学]