LPCVD制备多晶Si薄膜的工艺和性能分析  

Growth and properties of poly-Si thin film deposited by LPCVD

作　　者：胡佳宝[1] 何晓雄[1] 杨旭[1] 

机构地区：[1]合肥工业大学电子科学与应用物理学院,安徽合肥230009

出　　处：《合肥工业大学学报（自然科学版）》2012年第11期1496-1499,1540,共5页Journal of Hefei University of Technology：Natural Science

基　　金：安徽省自然科学基金资助项目(11040606M63);安徽省高校省级自然科学研究重点资助项目(KJ2009A091)

摘　　要：文章利用低压化学气相沉积法(LPCVD),在单晶Si衬底上制备多晶Si薄膜。利用原子力显微镜观察薄膜厚度和镀膜温度对多晶Si薄膜表面形貌的影响,并利用XRD研究退火温度对多晶Si薄膜结晶性能的影响。结果表明:镀膜温度越高、薄膜越厚,薄膜的晶粒尺寸越大;退火温度越高,薄膜的结晶越好。Poly-Si thin film is deposited on single crystalline silicon by low pressure chemical vapour deposition（LPCVD）. The influence of the thickness of the film and the deposition temperature on the surface morphology of poly-Si thin film was studied by using the atomic force microscope, and the in- fluence of the annealing temperature on the crystallinity of poly-Si thin film was studied by using X- ray diffraction（XRD）. The results indicate that the higher the deposition temperature, the thicker the film and the bigger the grain size; the higher the annealing temperature, the better the crystallinity of the film.

关 键 词：多晶硅薄膜 低压化学气相沉积 表面形貌 X射线衍射 

分 类 号：TN305.8[电子电信—物理电子学]