GaN基紫外探测器发展概况  

Development overview of GaN-based ultraviolet detector

作　　者：刘万金[1] 胡小燕[1] 喻松林[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2012年第11期1210-1214,共5页Laser & Infrared

摘　　要：基于宽禁带半导体材料的GaN基紫外探测器由于具有探测波长可调、工艺兼容性好、结构可多型化等优点,已成为近年来的研究热点。介绍了四种不同结构类型的紫外探测器:光导型、肖特基势垒、金属-半导体-金属、p-i-n结,并回顾了GaN基紫外探测器的的研究历程。GaN-based wide bandgap semiconductor ultraviolet detector has become a research hotspot in recent years due to its many advantages such as adjustable response wavelength, good process compatibility and diverse structure applicability. This paper introduces four different types of UV detector：photoconductor, Schottky, MSM and p-i-n. The history of GaN-based ultraviolet detector is reviewed and discussed.

关 键 词：GAN 紫外探测器 光电二极管 

分 类 号：TN23[电子电信—物理电子学] TN36