AlN薄膜制备及光学性能研究  

THE PREPARATION AND OPTICAL PROPERTIES OF ALN THIN FILMS

作　　者：席忠红[1] 李海翼[1] 

机构地区：[1]甘肃民族师范学院物理与水电工程系,甘肃合作747000

出　　处：《低温物理学报》2012年第6期467-470,共4页Low Temperature Physical Letters

基　　金：甘肃民族师范学院院长基金(批准号:11-15)资助的课题~~

摘　　要：采用直流磁控溅射的方法,分别在Si(111)和玻璃基片上沉积AlN薄膜.利用X射线衍射仪、X射线能谱仪、台阶仪、原子力显微镜、分光光度计和傅里叶变换红外光谱仪等分析薄膜的结构、组分、膜厚、形貌和光学性能.实验得到的样品为多晶六方相AlN,膜厚为720nm,含有少量的氧杂质.对AlN薄膜的光学性能的研究表明,样品在250～1000nm波长范围内具有较高的透过率;红外吸收谱以672cm-1为中心形成一个很宽的红外吸收带;薄膜的禁带宽度约为5.94eV.AlN thin films were prepared by IX; magnetron reactive sputtering on Si（111） and glass substrates. The properties of microstrueture, component, thickness, morphology and optics of AlN thin films were investigated by X-ray diffraction diffractometer, X-ray EDS, step profilometer, atomic force microscope, spectrophotometer and fourier-transform infrared spectrometer. The obtained samples are polycrystalline hexagonal A1N, the thickness of the samples is 720nm and it has little oxygen impurity in the samples. The optical properties of the A1N thin films were also investigated. The results show that the A1N samples have high transmission in the wave length range of 250-1000nm, there is an intensive and board band centered at 672cm-1 in its Fourier transformation infrared spectra and its ban＆gap value is 5. 94eV.

关 键 词：ALN薄膜 磁控溅射 光学性能 禁带宽度 

分 类 号：O484.1[理学—固体物理]