硅通孔技术的发展与挑战  

Development and challenges of through-silicon via technology

作　　者：刘培生[1,2] 黄金鑫[1,2] 仝良玉[1,2] 沈海军 施建根 

机构地区：[1]南通大学江苏省专用集成电路设计重点实验室,江苏南通226019 [2]南通富士通微电子股份有限公司,江苏南通226006

出　　处：《电子元件与材料》2012年第12期76-80,共5页Electronic Components And Materials

基　　金：江苏省高校自然科学重大基础研究资助项目(No.10KJA40043);南通大学自然科学研究资助项目(No.09Z051;No.09R23;No.2010K121);国家科技重大专项"02专项"资助项目(No.2009ZX02024-003);南通大学研究生科技创新计划资助项目(No.YKC12072);江苏省研究生科技创新计划资助项目(No.CXZZ12_0864)

摘　　要：3D堆叠技术近年来发展迅速,采用硅通孔技术(TSV)是3D堆叠封装的主要趋势。介绍了3D堆叠集成电路、硅通孔互连技术的研究现状、TSV模型;同时阐述了TSV的关键技术与材料,比如工艺流程、通孔制作、通孔填充材料、键合技术等;最后分析了其可靠性以及面临的挑战。TSV技术已经成为微电子领域的热点,也是未来发展的必然趋势,运用它将会使电子产品获得高性能、低成本、低功耗和多功能性。With the fast development in recent years, through-silicon-via （TSV） technology three-dimensional stacked packaging. The three-dimensional stacked integrated circuits, the researc model are reviewed and introduced; key technologies and materials of TSV, such as process flow, T is the main trend of h status of TSV, TSV SV fabrication, filling materials and bonding technology are described as well. At last, the reliability and its challenges are expounded. TSV becomes a hot research and the inevitable trend of microelectronics field. Better performance, lower cost, lower power consumption and more functionality of future electronic products become feasible with TSV concept application.

关 键 词：硅通孔 三维封装 综述 高性能 

分 类 号：TN605[电子电信—电路与系统]