P型氮掺杂ZnO薄膜的光学特性研究  

Optical properties of N-doped p type ZnO films

作　　者：郭松林[1] 徐小勇[1,2] 施卫国[1] 

机构地区：[1]萍乡高等专科学校化学工程系,江西萍乡337055 [2]湖南大学材料科学与工程学院,湖南长沙410082

出　　处：《真空》2012年第6期59-62,共4页Vacuum

摘　　要：以N2为P型掺杂源,利用射频磁控溅射技术,通过改变O2:N2比制备了不同N掺杂量的P型ZnO薄膜,详细研究分析了N掺杂ZnO薄膜的PL谱及电学性能。结果表明,随着O2:N2的变化,不仅薄膜的峰位发生了变化,其强度也进行相应的变化。当O2:N2为10:10时,薄膜具有三个发光峰,且UV峰发光强度最大,此时薄膜呈现出明显的P型特征。Different N-doped p type ZnO films were grown by RF magnetron sputtering through changing the O2/N2 ratio. Their photoluminescence（PL） and electrical properties were measured. The results show that the intensity and positions of these peaks change with the O2/N2 ratio. When the O2/N2 ratio is 10：10, the films have three peaks, and the UV peak is with the highest intensity. At the same time, the films present obvious p type characteristics.

关 键 词：磁控溅射 P型ZNO 红移 施主缺陷 受主掺杂 

分 类 号：O484[理学—固体物理] TB43[理学—物理]