常γ电调管材料质量影响因素的探讨  

Research of Influencing Factors on Material Quality for an Electrically Tunned Diode with Constant γ

作　　者：陈桂章[1] 

机构地区：[1]南京电子器件研究所

出　　处：《固体电子学研究与进展》1990年第4期379-385,共7页Research & Progress of SSE

摘　　要：本文报道了GaAs常γ电调变容管材料的研究.文中分析了GaAs单晶衬底的质量对外延层表面形貌和外延层-衬底间界面状态的影响;研究了外延工艺条件与外延层浓度分布的关系;讨论了外延层载流子浓度分布对器件C-V特性的影响.文中还给出了材料的制管结果.This paper describes recent progress of GaAs epitaxial material for an electrically tunned diode with constant γ. The influence of GaAs substrate quality on both the surface morphology of epilayers and the interfaces between epilayers and sub-states is analyzed. The dependence of doping profile of epilayers on the epitaxial growing process is studied. Then the influence of the epilayer carrier concentration profile on the C-V properties of the electrically tunned diodes with constant γ is discussed. Finally, the results of diodes made by the materials are also given.

关 键 词：常r电调管 庄控振荡器 GAAS 

分 类 号：TN752[电子电信—电路与系统]