BST组分梯度薄膜的性能研究  

Growth and Properties Characterization of Compositional Graded Barium Strontium Titanate Films

作　　者：赵旭[1] 胡作启[1] 李园园[1] 谢子健[1] 王宇辉[1] 

机构地区：[1]华中科技大学光学与电子信息学院,武汉430074

出　　处：《真空科学与技术学报》2012年第11期955-960,共6页Chinese Journal of Vacuum Science and Technology

基　　金：航天科工集团支撑基金项目;湖北省自然科学基金项目(2007ABA112)

摘　　要：采用射频磁控溅射法在蓝宝石衬底上制备了上组分梯度、下组分梯度及单层BST薄膜,对比研究了三种结构BST薄膜的电、热性能。实验表明:下组分梯度BST薄膜的介电性能最优(优值因子为66.2),温度稳定性能最佳(在25～80℃范围内,介温变化率为7.8%)。此外,实验还运用X射线衍射仪、场发射电子扫描显微镜和透射电子显微镜对BST薄膜的晶体结构进行了研究,运用EDS能谱仪对BST薄膜的组分梯度进行了验证。The upgraded,downgraded,and uniform barium strontium titanate（BST） thin films were deposited,respectively,by multi-target magnetron sputtering on sapphire substrate.The influencing growth factors,including the sputtering power,substrate temperature and pressure,were evaluated.The microstructures and properties of the BST films were characterized with X-ray diffraction,energy dispersive spectroscopy（EDS）,field emission scanning electron microscopy,and transmission electron microscopy.The results show that the downgraded BST films have the best dielectric properties（a figure of merit of 66.2）,and the highest temperature stability（dielectric dispersion of 7.8% in the range of 25～80℃）.

关 键 词：梯度薄膜 磁控溅射 温度稳定性 EDS线扫描 

分 类 号：TN384[电子电信—物理电子学]