Simulation of a new style vertical HVPE system  

作　　者：ZHOU An XIU XiangQian ZHANG Rong XIE ZiLi LIU Bin HAN Ping GU ShuLin SHI Yi ZHENG YouDou 

机构地区：[1]School of Physics, Nanjing University, Nanjing 210093, China [2]Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2012年第12期2434-2438,共5页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the National Basic Research Program of China(Grant No.2011CB301900);the National Natural Science Foundation of China(Grant Nos.60990311,60820106003,60906025 and 60936004);the Natural Science Foundation of Jiangsu Province(Grant Nos. BK2008019,BK2010385,BK2009255 and BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics

摘　　要：In this paper,we simulate a new style vertical HVPE reactor by using computational fluid dynamics program FLUENT.In order to find the best parameter on the growth rate of Gallium nitride(GaN),we change the distance between the inlet and the substrate,GaCl and NH3 inlets,and also we add substrate rotation separately.With the increase of the distance between the substrate and the gas inlet,GaN deposition rate decreases and the uniformity becomes better.The results show that the optimal distance in this new-style vertical hydride vapour phase epitaxy(HVPE) system is 4 cm.Besides,as the distance between the GaCl inlet and the NH3 inlet changes,the uniformity of GaN deposition varies.Our findings indicate that the optimal distance is 3 cm.Furthermore,it is found that substrate rotation also affects the growth rate of GaN.In this paper,we simulate a new style vertical HVPE reactor by using computational fluid dynamics program FLUENT.In order to find the best parameter on the growth rate of Gallium nitride（GaN）,we change the distance between the inlet and the substrate,GaCl and NH3 inlets,and also we add substrate rotation separately.With the increase of the distance between the substrate and the gas inlet,GaN deposition rate decreases and the uniformity becomes better.The results show that the optimal distance in this new-style vertical hydride vapour phase epitaxy（HVPE） system is 4 cm.Besides,as the distance between the GaCl inlet and the NH3 inlet changes,the uniformity of GaN deposition varies.Our findings indicate that the optimal distance is 3 cm.Furthermore,it is found that substrate rotation also affects the growth rate of GaN.

关 键 词：GAN HVPE numerical simulation 

分 类 号：TN304.23[电子电信—物理电子学] N94[自然科学总论—系统科学]