衬底偏压对ZnO:Zr薄膜结构及光电性能的影响  

Effect of bias voltage on the structural,optical and electrical properties of ZnO:Zr thin films

作　　者：张化福[1] 

机构地区：[1]山东理工大学理学院,山东淄博255091

出　　处：《山东理工大学学报（自然科学版）》2012年第5期1-3,25,共4页Journal of Shandong University of Technology:Natural Science Edition

基　　金：山东省自然科学基金资助项目(ZR2009GQ011)

摘　　要：以Zn:Zr(Zr片贴在金属Zn靶上面)为溅射靶材,利用直流反应磁控溅射法在Ar/O2混合气氛中制备Zr掺杂ZnO(ZnO:Zr)薄膜.在制备ZnO:Zr薄膜时,衬底偏压在0～60V之间变化.研究结果表明,衬底偏压对薄膜的结构、光学及电学性能有很大影响.当衬底偏压从0增大到60V时,薄膜的平均光学透过率和平均折射率都单调增大,而薄膜的晶粒尺寸先增大后减小.ZnO:Zr薄膜电阻率的变化规律与晶粒尺寸相反.Zr-doped ZnO thin films were fabricated in Ar/O2 mixture gas by DC reactive magne- tron sputtering from a Zn：Zr target where Zr chips were attached on the surface of the metallic Zn target. During the process of deposition, the substrate bias voltage ranges from 0 to 60 V. Re- sults indicate that the bias voltage plays an important role in the structure, optical and electrical properties of the deposited films. When the bias voltage increases from 0 to 60V, the average op- tical transmittance and refractive index of ZnO： Zr films monotoneously increase. However, the crystallite size increases initially and then decreases with increasing bias voltage. For the resistivi- ty of ZnO：Zr films, the variation is on the contrary.

关 键 词：反应磁控溅射 衬底偏压 ZnO:Zr 薄膜 

分 类 号：TN304.2[电子电信—物理电子学] TN304.055