保护环对130nm体硅PMOS抗单粒子瞬态特性的影响  

Impact of Guard-ring on Single Event Transient Resistance of 130nm Bulk PMOS Device

作　　者：曹琛[1] 王俊峰[1] 岳红菊[1] 唐威[1] 吴龙胜[1] 

机构地区：[1]西安微电子技术研究所,陕西西安710054

出　　处：《微电子学与计算机》2012年第12期149-153,共5页Microelectronics & Computer

摘　　要：基于TCAD(Technology Computer Aided Design)仿真软件,通过对带有不同宽度保护环的130nm体硅PMOS器件进行单粒子辐照仿真,研究了保护环结构对深亚微米器件因单粒子辐照所产生的寄生双极效应.仿真结果表明,保护环结构能够大幅缩短器件SET(Single Event Transient)电流的脉冲宽度,有效抑制寄生双极电荷收集,这种抑制作用随着保护环宽度增加而增强,最终趋于稳定.通过对加固器件的面积和抗辐射性能的折衷考虑,改进了保护环结构,并以宽度为0.38μm的保护环为例,证明了改进后的结构能够在保证器件抗单粒子性能及电学特性,同时节省29.4%的面积.A 130nm bulk PMOSFET is generated and calibrated with TCAD（Technology Computer Aided Design） simulator. Single event simulation is used to investigate the impact of guard-ring with different widths on parasitic bipolar effect due to a direct hit ion strike in VDSM device. Simulation results demonstrate that guard-ring structure can significantly reduce SET（Single Event Transient） current pulse width, effectively suppress the parasitic bipolar charge collection, the capacity of this suppression is enhanced with the guard-ring becoming widen, and tends to be stabilized ultimately. In order to consider the area of harden device and the irradiation resistance simultaneously, guard-ring structure is improved. As the guard-ring with width of 0. 38μm, it is proved that novel structure can maintain the single event resistance of the device with area dropping by 29. 4%.

关 键 词：保护环 深亚微米 器件模拟 单粒子辐照 寄生双极效应 

分 类 号：TN386.1[电子电信—物理电子学]