负偏压对电弧离子镀复合TiAlN薄膜的影响  

Influence of Negative Bias on TiAlN Films by Arc Ion Plating

作　　者：黄美东[1] 许世鹏[1] 刘野[1] 薛利[1] 潘玉鹏[1] 范喜迎[1] 

机构地区：[1]天津师范大学物理与电子信息学院,天津300387

出　　处：《表面技术》2012年第6期1-1,2,3,6,共4页Surface Technology

基　　金：国家自然科学基金(61078059);天津师范大学创新计划项目(52X09038)

摘　　要：采用电弧离子镀技术,以W18Cr4V高速钢为基体,调整基体负偏压,制得多个复合TiAlN薄膜试样,研究了基体负偏压对薄膜微观组织形貌、物相组成、晶格位向、硬度、厚度和沉积速率的影响。结果表明,过高或过低的负偏压会使得膜层表面不平整,显微硬度下降。当负偏压为200 V时,膜层的沉积速率最大;负偏压为150 V时,有利于薄膜(111)晶面的择优取向生长,且TiAlN膜的硬度最高。TiA1N thin films were fabricated via arc ion plating on the W18Cr4V high-speed steel under different nega- tive biases. The influence of negative bias on the microstructure, phase, and crystalline orientation, hardness, and deposition rate of the films were investigated. The results show that the films have a coarse surface at too high or too low biases, resulting in lower hardness. The largest deposition rate is achieved at -200 V bias. The TiA1N thin film has a （ 111 ） preferred orienta- tion when deposited at -150 V bias, where the largest hardness is achieved

关 键 词：电弧离子镀 TIALN薄膜 负偏压 

分 类 号：TG174.444[金属学及工艺—金属表面处理]