铜镍合金为衬底化学气相沉积法制备石墨烯研究  

Study on the graphene preparation on Cu-Ni alloy substrate by chemical vapor deposition

作　　者：李兴鳌[1,2] 任明伟[3] 任睿毅[3] 王博琳[3] 苏丹[1] 马延文[1] 杨建平[2] 

机构地区：[1]南京邮电大学材料科学与工程学院,江苏南京210046 [2]南京邮电大学理学院,江苏南京210046 [3]南京邮电大学光电工程学院,江苏南京210046

出　　处：《功能材料》2012年第23期3257-3260,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(51172110);江苏省自然科学基金资助项目(BK2010525)

摘　　要：利用磁控双靶共溅射法制备了不同含量的铜镍合金薄膜,利用EDAX对合金薄膜衬底的铜镍配比进行了定量分析。以苯为碳源,选择相同的合金衬底分别在800、600和400℃的温度下使用化学气相沉积法生长石墨烯,对样品进行了拉曼光谱和SEM表征,研究了温度对石墨烯生长的影响。选择不同配比的铜镍合金衬底,在400℃下生长石墨烯,研究了衬底中铜、镍元素不同配比对石墨烯生长的影响。The Cu-Ni alloy thin films with different ratio of Cu and Ni were prepared by double targets magnetron sputtering method.The samples were characterized by energy dispersive analysis of X-rays（EDAX）.The ratio of Cu and Ni was accurately determined.Three graphene samples were fabricated with benzene as carbon source on the same kind of Cu-Ni alloy substrates at variable temperature of 800,600 and 400℃ by chemical vapor deposition method to study the impact of temperature on the growth of graphene.Three graphene samples were produced on three different Cu-Ni alloy substrates at 400℃ to study the impact of different ratio of the substrates on the growth of graphene.

关 键 词：石墨烯 化学气相沉积 铜镍合金 磁控溅射 苯 

分 类 号：O484[理学—固体物理] O613[理学—物理]