铝诱导过程中硅铝厚度比优化的研究  

Research of optimization of thickness ratio of silicon to aluminum in the process of aluminum induced crystallization

作　　者：唐正霞[1,2] 沈鸿烈[2] 江丰[2] 

机构地区：[1]金陵科技学院材料工程学院,江苏南京211169 [2]南京航空航天大学材料科学与技术学院,江苏南京210016

出　　处：《功能材料》2012年第23期3312-3315,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(61176062);江苏省优势学科资助项目(PAPD);金陵科技学院博士启动基金资助项目(jit-b-201206)

摘　　要：以康宁Eagle 2000玻璃为衬底,用磁控溅射法制备了不同硅铝厚度比的非晶硅/二氧化硅/铝叠层,在氩气保护下于450℃退火一定时间,制备出铝诱导多晶硅薄膜。用Raman光谱和紫外反射光谱讨论了硅铝厚度比对薄膜结晶性能的影响。结果表明,硅铝厚度比对多晶硅薄膜的结晶性能有显著影响,最佳硅铝厚度比为5∶1。Corning glass eagle 2000 was used as substrate to prepare glass/amorphous/silicate/aluminum stacks of different thickness ratio of silicon to aluminum by magnetron-sputtering.The stacks were annealed at 450℃ for selected time in Ar atmosphere and polycrystalline silicon film was achieved by aluminum-induced crystallization.Raman spectra and ultraviolet reflectance spectra were used to measure the crystalline quality of polycrystalline silicon.The crystalline quality was greatly influenced by the thickness ratio.The optimum thickness ratio of silicon to aluminum was 5∶1,which was inferred by the crystalline quality.

关 键 词：薄膜 多晶硅 铝诱导晶化 厚度比 

分 类 号：O484.1[理学—固体物理] TB34[理学—物理]