CVD淀积SiC薄膜SiH_4、CH_4的分解反应的计算机模拟研究  

Computing Simulation of Decomposition of SIH_4 and CH_4 in SiC Films

作　　者：张洪涛[1] 许辉[1] 徐重阳[1] 邹雪城 王长安 赵伯芳 周雪梅 

机构地区：[1]湖北工学院电气工程与计算机科学系,湖北武汉430074

出　　处：《计算机与现代化》2000年第3期21-25,40,共6页Computer and Modernization

摘　　要：采用化学气相淀积 ( CVD)淀积 Si C薄膜中 Si H4、CH4的分解反应方程对 Si H4、CH4的分解产物种属进行数学建模 ,并结合相关热力学数据进行计算机模拟 ,得出 Si H4分解产物中以 Si H2 为最多 ,CH4以 CH2 为最多 ,表明它们在淀积薄膜中是主要因素。The decomposing mechanism of SiH 4 and CH 4 in nc SiC film by CVD was discussed.After the reaction equations were determined by collecting previous chemical data, the computing simulation was carried out. The results show that the SiH 2 and CH 2 are main factors in deposition of nc SiC films.

关 键 词：化学气相淀积 SIC薄膜 SIH4 CH4 计算机模拟 

分 类 号：TN304.24[电子电信—物理电子学]