红光LED尺寸对ITO电流扩展的影响  

Effect of Red LED Size on Current Spreading of ITO

作　　者：尹以安[1] 王维韵 王后锦 毛明华 

机构地区：[1]华南师范大学光电子材料与技术研究所,广州510631 [2]东莞福地电子材料有限公司,广东东莞523077

出　　处：《半导体技术》2012年第12期923-927,共5页Semiconductor Technology

基　　金：广东省自然科学基金项目(S2011040005150);广东省省部产学研项目(2011B090400401)

摘　　要：采用真空电子束蒸镀的方法制备氧化铟锡(ITO)薄膜,以此作为AlGaInP红光发光二极管(LED)的电流扩展层。研究了该LED结构中,不同的芯粒尺寸对ITO电流扩展的影响。结果表明,在电极尺寸一定的情况下,随着芯粒尺寸的变大,ITO电流扩展层对芯粒发光强度的变化起到显著的效果;在电极直径大小为90μm,芯粒尺寸为190μm×190μm时,电流扩展效果最优,亮度增加18.80%,而当芯粒尺寸增大到220μm×220μm时,亮度增加17.01%,其相对电流扩展效果下降。选取适当芯粒尺寸对ITO的电流扩展至关重要。Indium tin oxide（ITO） films were fabricated with vacuum electron-beam evaporation as a current spreading layer of AlGaInP red light-emitting diode（LED）.Study on the effect of ITO layer current spreading with different chip sizes,the results show that the ITO current spreading layer plays a significant effect under the given size of electrode,with the increase of the chip size.When the electrode diameter is 90 μm,the chip size is 190 μm×190 μm,the current spreading effect is optimum,the luminous intensity increases by 18.80%,and when the chip size increases to 220 μm×220 μm,the luminous intensity increases 17.01%,the relative current spreading effect is reduced.Selecting proper chip size is crucial for ITO current spreading effect.

关 键 词：氧化铟锡 芯粒尺寸 电流扩展 发光二极管 ALGAINP 

分 类 号：TN364.2[电子电信—物理电子学]