基于内透明集电极技术的超结IGBT仿真研究  

Research on Superjuction IGBT With Internal Transparent Collector Technology

作　　者：周东海[1] 胡冬青[1] 李立[1] 魏峰[1] 

机构地区：[1]北京工业大学,北京100124

出　　处：《电力电子技术》2012年第12期57-59,共3页Power Electronics

基　　金：国家自然科学资金资助项目(61176071)~~

摘　　要：基于内透明集电极(ITC)IGBT技术,提出了一种ITC超结IGBT(SJ-IGBT)结构。利用器件仿真工具,研究了SJ-IGBT的导通、开关、短路特性,并与普通平面栅ITC-IGBT技术指标进行了对比。仿真重点侧重于局域载流子寿命控制层(LCLC)位置和控制层内载流子寿命对开关、短路特性的影响。结果显示,与ITC-IGBT相比,SJ-IGBT通态压降与关断损耗折中技术曲线更加靠近原点,综合性能指标优于普通ITC-IGBT;同时,SJ-IGBT短路特性对LCLC位置和载流子局域寿命变化敏感度明显下降。A new structure of the superjunction IGBT（SJ-IGBT） is presented,which bases on internal transparent collector （ITC）technology.Device simulations have been performed for SJ-IGBT and common planar ITC-IGBT, their I-U charac- teristics, switching and short-circuit performances have been compared.The effects of the location and lifetime of the lo- cal carrier lifetime control on the device characteristics above are mainly discussed.The simulation results show that the SJ-IGBT has a better trade-off curve than ITC-IGBT,and indicate that the comprehensive performance of SJ-IGBT is superior to common ITC-IGBT.Meanwhile, the sensitivity of short-circuit performance of SJ-IGBT obviously decrease.

关 键 词：绝缘栅双极型晶体管 超结 内透明集电极 

分 类 号：TN32[电子电信—物理电子学]