具有逆向导通能力的GaN功率开关器件  

The GaN Power Switch With Reverse Conducting

作　　者：魏进[1,2] 姚尧[1] 张波[2] 刘扬[1] 

机构地区：[1]中山大学,物理科学与工程技术学院,广东广州510275 [2]电子科技大学,微电子与固体电子学院,四川成都610054

出　　处：《电力电子技术》2012年第12期67-68,共2页Power Electronics

基　　金：国家自然科学基金(511777175);教育部博士项目基金(20110171110021)~~

摘　　要：介绍了一种具有逆向导通能力的GaN功率开关器件逆向导通-高电子迁移率晶体管(RC-HFET)。通过在栅极与漏极之间插入一个肖特基电极并与源极连接,RC-HFET获得了一个逆向导电通路,从而相当于一个功率开关与二极管反并联结构。RC-HFET正向工作的原理与传统HFET相似,导通电阻与传统HFET相近。在器件制造上,RC-HFET与传统HFET完全兼容,无需额外的光刻版及加工流程。因此,在电机驱动等需要反向续流的功率系统中,RC-HFET消除了对续流二极管的需求,提供了一种更具成本优势的方案。A reverse conducting GaN power switch reverse conducting high electron mobility transistor（RC-HFET） is presented.A Schottky contact that electrically connected with the source is put between the gate and the drain as a re- verse conducting path,thus equivalent to a transistor and diode in antipalleled configuration.The forward working mechanism of RC-HFET is similar to that of the conventional HFET, with close on resistances.The fabricating of the RC-HFET is highly compatible with the conventional HFET, needing no additional photolithography and other process. Therefore, in power systems such as motor controlling, RC-HFET avoids the requirement for a freewheeling diode, of- feting a cost effective solution.

关 键 词：晶体管 逆向导通 体二极管 

分 类 号：TN32[电子电信—物理电子学]