0.02～2 GHz GaN分布式功率放大器的原理及设计  

Principle and design of 0.02～2 GHz GaN distributed power amplifier

作　　者：谢晓峰[1,2] 肖仕伟[1] 沈川[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900 [2]中国工程物理研究院研究生部,北京100084

出　　处：《现代电子技术》2012年第24期141-144,共4页Modern Electronics Technique

摘　　要：作为一种宽带放大器的结构,分布式放大器结构能够实现高达多个倍频程的带宽,这种结构是由电感元件和晶体管的等效电容构成的栅极和漏极两条人工传输线组成的。随着第三代宽禁带半导体GaN的发展,将GaN技术应用在分布式放大器的设计中,能够得到较高的输出功率,实现宽带功率放大器的设计。介绍了一种采用4个GaN HEMT(高电子迁移率晶体管)设计分布式功率放大器的原理和方法,实现了0.02～2GHz的带宽。仿真结果表明,带宽内小信号增益大于10dB,增益平坦度优于±0.5dB,饱和输出功率大于41dBm,PAE大于15%。As a type of wideband amplifier structure, the distributed amplifier structure is able to achieve the wideband as high as several octaves. The distributed amplifier consists of two artificial transmission lines which is formed by inductance component and the capacitances of the transistor. With the development of the third generation wide bandgap semiconductor GaN, it can achieve high output power when applying GaN technology to the distributed amplifier. In this paper, the principle and design method of a distibuted power amplifier with 4 GaN HEMTs （high electron mobility transistor） with 0.02-2 GHz bandwidth is introduced. The simualted results shows that the small signal gain within the bandwidth is above 10 dB and the gain flatness is ±0.5 dB while the saturated output power is more than 41 dBm and the PAE is no less than 15%.

关 键 词：GAN 分布式放大器 功率放大器 宽带放大器 

分 类 号：TN722-34[电子电信—电路与系统]