抗辐射铁电存储器的研究进展  

Research Progress of Radiation Hardened Ferroelectric Random Access Memory

作　　者：翟亚红[1] 李威[1] 李平[1] 胡滨[1] 霍伟荣[1] 李俊宏[1] 辜科[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《材料导报》2012年第23期34-38,共5页Materials Reports

基　　金：国家自然科学基金(61204084)

摘　　要：在分析铁电存储器工作原理以及铁电薄膜材料抗辐射能力的基础上,综述了商业化铁电存储器的发展历程以及辐射实验结果。总结了抗辐射加固的铁电存储器的研究进展以及抗辐射加固的方法,展望了抗辐射铁电存储器的应用前景。The principle of FeRAM and the radiation hardness ability of ferroelectric film are fully analyzed and reviewed. The commercial FeRAM＇s roadmap and radiation results are given. Subsequently, an overview of the state of radiation hardened FeRAM and the radiation hardness measures are presented. The research and application on ra- diation hardened FeRAM are prospected.

关 键 词：铁电存储器 辐射效应 铁电材料 铁电电容 

分 类 号：TN384[电子电信—物理电子学]