高性能2～18GHz超宽带MMIC6位数字衰减器  

Excellent MMIC Ultra Wideband 6-Bit Digital Attenuator over 2 ～ 18GHz

作　　者：戴永胜[1] 李平[1] 孙宏途[1] 徐利[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院,南京210094

出　　处：《微波学报》2012年第6期80-83,92,共5页Journal of Microwaves

基　　金：国家重点基础研究发展计划"973"计划(2009CB320200);国家国防重点实验室基金(9140C1402021102)

摘　　要：介绍了一种高性能2～18GHz MMIC 6位GaAs PHEMT数字衰减器的设计、制造和测试结果。研制的单片数字衰减器衰减步进为0.5dB;最大衰减范围为31.5dB;参考态插入损耗<5.71dB;所有衰减态的输入、输出电压驻波比<1.8;衰减精度:+2.31dB/-0.51dB;插入相移:+6.28°/-1.53°;64态幅度均方根误差<1.0dB;64态相移均方根误差<1.3°;芯片尺寸:2.89mm×1.22mm×0.1mm。工艺成品率高达85%。This paper describes the design, fabrication, and testing of an excellent MMIC 6 bit GaAs PHEMT digital attenuator in 2 - 18GHz. The 6-bit MMIC digital attenuator has 0.5dB resolution and 31.5dB dynamic attenuation range. The insertion loss of reference state is less than 5.71dB. The input and output VSWR are better than 1.8 over all states and the entire frequency range. The attenuation accuracy is ＋2.31dB/-0.51dB. The insertion phase shift is ＋6. 28°/- 1.53°. RMS amplitude error is less than 1. OdB over all 64 states. RMS phase error is less than 1.3 ° over all 64 states. The chip size of the MMIC attenuator is 2.89mm×1. 22mm×0. 1mm. The yield is more than 85%.

关 键 词：数字衰减器 微波单片集成电路 砷化镓 超宽带 赝配高电子迁移率晶体管 

分 类 号：TN715[电子电信—电路与系统]