生长温度对Si基Ge量子点VLP-CVD自组织生长的影响  

Temperature Dependence of Self organized Growth of Ge Quantum Dots on Si Substrate by VLP-CVD

作　　者：吴军[1] 顾书林[1] 施毅[1] 江宁[1] 朱顺明[1] 郑有炓[1] 王牧[1] 刘晓勇 闵乃本[1] 

机构地区：[1]南京大学物理系国家固体微结构实验室,南京210093

出　　处：《高技术通讯》2000年第4期34-37,共4页Chinese High Technology Letters

基　　金：国家自然科学基金资助项目!(69706004)

摘　　要：对利用超低压化学气相淀积 (VLP CVD)技术在Si上自组织生长Ge量子点的特征进行了研究 ,发现生长温度对Ge量子点尺寸分布和密度的影响不同于分子束外延 (MBE)的结果 ,这种现象与VLP CVD表面控制反应模式有关。实验表明 。The result of self organized growth of Ge quantum dots on Si substrate by Very Low Pressure Chemical Vapor Deposition (VLP CVD) is reported. The size distribution and density of Ge quantum dots have different dependences on the growth temperature compared with the results obtained by MBE. These phenomena could be ascribed to the effect of the surface controlled reaction by VLP CVD. Electing the optimize growth temperature, Ge quantum dots with narrow size distribution and high density can be grown on Si substrate by VLP CVD.

关 键 词：GE量子点 化学气相淀积 自组织生长 锗 

分 类 号：TN304.055[电子电信—物理电子学]