基于氮化铝技术的表贴型微波封装  

Surface Mount Microwave Package Based on AlN Substrate

作　　者：郑远 吴健 钱峰[2] 陈新宇 艾萱 曹坤[2] 杨磊 

机构地区：[1]南京国博电子有限公司,南京210016 [2]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2012年第6期584-589,共6页Research & Progress of SSE

摘　　要：采用氮化铝多层布线技术,运用垂直过渡方式实现微波信号从基板底部到表面的信号传输,完成表贴式微波封装设计。在DC-18GHz内,该表贴互连反射损耗小于-15dB,插入损耗小于1.0dB。采用该技术封装了6～18GHz宽带放大器,封装尺寸为5mm×5mm×1.2mm,频带内反射损耗小于-10dB,增益15dB,平坦度小于1dB;另外还封装C波段5W功率放大器,封装尺寸为8mm×8mm×1.2mm,带内增益大于25dB,反射损耗小于-10dB,饱和输出功率37dBm,效率35%。采用技术的表面贴装放大器性能上能够满足微波通信、雷达应用,可用回流焊安装,适合规模生产。The surface mount microwave package based on A1N multilayer substrate has been fabricated by using vertical transition for signal from bottom to top surface. This transition shows that the return loss is less than --15 dB and the insertion loss is less than 1.0 dB. A pack- aged 6~18 GHz amplifier demonstrates the package dimension of 5 mm X 5 mm X 1.2 ram, less than --10 dB return loss in band, 15 dB gain and 1 dB gain flatness. Another C-band 5 W power amplifier by this packaging technique has the dimension of 8 mm X 8 mm X 1.2 ram, and demon- strates less than --10 dB return loss and 25 dB gain in band, 37 dBm saturation output power and 35% power-added-efficiency. The performance of the packaged amplifier can meet the require- ments of microwave communication and radar. It is suitable for mass production because the de- vice can be mounted by reflow.

关 键 词：氮化铝 微波封装 微波单片集成电路 放大器 

分 类 号：TN305.94[电子电信—物理电子学] TN454