InAs/GaSbⅡ类超晶格与HgCdTe红外探测器的比较研究  

Comparison of TypeⅡ InAs/GaSb Superlattices and HgCdTe Infrared Detectors

作　　者：余连杰[1,2] 邓功荣[1] 苏玉辉[1] 

机构地区：[1]昆明物理研究所,云南昆明650223 [2]微光夜视技术重点实验室,陕西西安710065

出　　处：《红外技术》2012年第12期683-689,共7页Infrared Technology

基　　金：云南省应用基础研究面上项目;编号:2008CD176

摘　　要：HgCdTe、QWIP和InAs/GaSbⅡ类超晶格被公认是第三代红外焦平面探测器的首选。主要对比分析了HgCdTe和InAs/GaSbⅡ类超晶格红外探测器,InAs/GaSbⅡ类超晶格具有响应波段宽且精确可控、工作温度高、载流子寿命长、暗电流低和均匀性好等优点,使其在甚长波、多色以及非制冷红外焦平面阵列等方面具有广阔的发展应用前景。The HgCdTe photodiodes, quantum well infrared photodiodes （QWIP） and type II InAs/GaSb superlattice photodiodes have emerged as the first candidate for third generation infrared detectors. There are many advantages of type II InAs/GaSb superlattice photodiodes over the HgCdTe photodiodes, for example, a highly adjustable broad spectral response range, higher operating temperature, longer carrier lifetime, lower leakage current and greater uniformity. There will be potential applications in the future for type II InAs/GaSb superlattice photodiode in the very long wavelength infrared（VLWIR）, multi-color and uncooled infrared Focal Plane Arrays.

关 键 词：INAS GASB HgCdTeⅡ类超晶格 红外探测器 

分 类 号：TN215[电子电信—物理电子学]