SOI LDMOS器件纵向耐压技术的研究进展  

Progress in the Research of Vertical Voltage-Sustaining Technology in SOI LDMOS Device

作　　者：徐光明[1] 郭宇锋[1] 花婷婷[1] 徐跃[1] 吉新春[1] 

机构地区：[1]南京邮电大学电子科学与工程学院,江苏南京210003

出　　处：《功能材料与器件学报》2012年第5期403-411,共9页Journal of Functional Materials and Devices

基　　金：国家自然科学基金项目(资助号:60806027;61076073);电子薄膜与集成器件国家重点实验室基金(KFJJ201011)

摘　　要：SOI LDMOS是SOI高压集成电路的核心器件,而纵向击穿电压是制约其性能的关键。本文首先指出了常规SOI LDMOS纵向耐压低的原因;然后介绍了SOI高压器件纵向耐压理论,分析了该理论中三种改善SOI器件纵向耐压技术(超薄SOI技术、界面电荷技术、低k介质层技术)的工作原理;而后基于这三种技术,对近年来国内外在SOI纵向耐压方面所做的工作进行了分类和总结,分析了各自的优缺点;最后对未来技术的发展进行了展望。SOI LDMOS device is the core of SOI HVIC, and the vertical breakdown voltage is the key to restrict its performance. First, this paper points out the reasons for the low vertical breakdown voltage of conventional SOI LDMOS ; Then the vertical voltage - sustaining theory of SOl high - voltage device are introduced, and the operating principle of the three methods to improve the vertical voltage - sustaining technology of SOI device （ Ultra thin SOI, Interface charge, Low k Dielectric） are analyzed ; After that , based on those three technology, the research work in respect of the SOI vertical voltage - sustaining in recent years are classified and summarized, also their merits and drawbacks are analyzed; Finally, the development of the future vertical voltage - sustaining technology are prospected.

关 键 词：LDMOS 超薄SOI 界面电荷 低K介质 纵向耐压 

分 类 号：TN386[电子电信—物理电子学]