Hg_(1-x)Cd_xTe/CdTe/Si薄膜厚度测试方法的研究  

Study on film thickness measurement of Hg_(1-x)Cd_xTe/CdTe/Si

作　　者：折伟林[1] 田璐[1] 晋舜国[1] 许秀娟[1] 沈宝玉[1] 王文燕[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2012年第12期1351-1354,共4页Laser & Infrared

摘　　要：在分子束外延生长高质量的CdTe/Si复合衬底上,分别通过MBE和LPE技术成功地研制出Hg1-xCdxTe/CdTe/Si红外探测器所需的重要红外半导体材料。利用傅里叶变换红外光谱仪对Hg1-xCdxTe/CdTe/Si红外半导体材料的红外透射光谱进行测试分析且计算薄膜厚度,并配合扫描电子显微镜对其厚度计算分析进行校正,最终获得一种无破坏、无污染、快捷方便的多层膜厚度测试方法。High quality CdTe/Si composite substrate is grown by molecular beam epitaxy. We developHg1-xCdxTe/CdTe/si which is an important infrared material and used for making infrared detector by MBE and LPE respectively. The infrared transmission spectrum of Hg1-xCdxTe/CdTe/sianalyzed and then the film thickness is calcu- lated. The SEM measurement result is used for correcting. Finally, we establish a non-destructive, non-polluted, fast and convenient measurement method for muhilayer film thickness.

关 键 词：碲镉汞/碲化镉/硅 傅里叶变换红外光谱仪 扫描电子显微镜 分子束外延 液相外延 

分 类 号：TH744.1[机械工程—光学工程]