微波电子回旋共振等离子体化学气相沉积法制备多晶硅薄膜  

The fabrication of polycrystalline Si thin film by electron cyclotron resonance plasma source enhanced CVD

作　　者：左潇[1] 魏钰[1] 陈龙威[1] 舒兴胜[1] 孟月东[1] 

机构地区：[1]中国科学院等离子体物理研究所,合肥230031

出　　处：《核聚变与等离子体物理》2012年第4期356-361,共6页Nuclear Fusion and Plasma Physics

基　　金：国家自然科学基金资助项目(085JA16501)

摘　　要：利用微波电子回旋共振等离子体增强型化学气相沉积(ECR-PECVD)采用一步法直接在K9玻璃上低温沉积制备了多晶硅薄膜。研究了不同实验参数对薄膜沉积的影响,采用X射线衍射(XRD)、拉曼光谱、扫描电子显微镜(SEM)等实验分析方法对不同条件下制备的样品进行了晶体结构和表面形貌分析,并讨论了多晶硅薄膜沉积的最佳条件。实验结果表明,玻璃衬底上多晶硅薄膜呈柱状生长,并有一定厚度的非晶孵化层;较高氢气比例和衬底温度有利于结晶,薄膜的结晶率达到了62%;晶粒团簇的最大尺寸约为500nm。The Polycrystalline silicon thin films were directly fabricated on K9 glasses at low substrate temperatures by the use of electron cyclotron resonance plasma source enhanced chemical vapor deposition system. In order to explore the optimal deposition condition of polycrystalline silicon thin films, the influence of different deposition parameters （such as hydrogen dilution ratio, substrate temperature） on the deposition was studied. The X-ray diffraction spectra, Raman spectra and scanning electron microscopy measurements were carried out to characterize the micro-structure and the topography of polycrystalline silicon thin films. The results showed that polycrystalline silicon thin films with the maximum crystallization fraction of 62% were obtained, which was reported to be suitable to fabricate high efficiency thin film silicon solar cells. 7[he maximum size of crystal clusters was 500 nm. It was found that columnar structure crystals were deposited on the glass substrates, however, with an amorphous incubation layer formed first; higher hydrogen dilution ratio and substrate temperature were beneficial to improve the crystallization fraction.

关 键 词：电子回旋共振等离子体增强型化学气相沉积 低温 直接制备 多晶硅薄膜 

分 类 号：O539[理学—等离子体物理]