紫外激光切割磷化铟晶圆的工艺研究  

Study on UV Laser Cutting Processes of Indium Phosphide Wafer

作　　者：周波 郭亮 彭信翰 张庆茂 罗泽锴 

机构地区：[1]广东省微纳光子功能材料与器件重点实验室,广东广州510006 [2]深圳市木森科技有限公司,广东深圳518102

出　　处：《应用激光》2012年第6期491-496,共6页Applied Laser

基　　金：中央财政支持地方高校专项资金项目激光先进制造创新培养基地资助项目(项目编号:510-C10293);广东省教育厅学科建设专项资助项目(项目编号:CXZD1139);华南理工大学国家金属材料近净成形工程技术研究中心开放基金资助项目(项目编号:2011006)

摘　　要：为提高晶圆的集成度,提升晶粒分离的质量和效率,采用以二极管泵浦的纳秒级调Q紫外激光切割磷化铟晶圆,利用劈裂机进行裂片,使用金相显微镜检测磷化铟晶圆的切割深度与切口宽度。运用单参数变化法分析重复频率、占空比、切割速度和辅助气体压力对切割深度影响,结果表明,切割深度与重复频率、切割速度近似呈反比关系,与占空比近似呈正比关系,而辅助气体压力对切割深度的影响不大。通过正交实验设计得到切口宽度的最优参数,当重复频率为200 kHz,占空比为10%,切割速度为300 mm/s,气压为0.2 MPa时,最小切口宽度达到6.2μm。综合分析了激光工艺参数和辅助工艺与裂片合格率的关系,最终使磷化铟晶圆裂片合格率达到98%。In order to improve the integration of the wafer, and to enhance the quality and efficiency of grain-separation, nanosecond diode pumped Q-switched UV laser was used for cutting InP wafer, splitting-machine was used for the splitting of InP wafer, the cutting depth and kerr width of InP wafer were detected by the metallurgical microscope. Using the single parameter variation methods to analysis the effect of repetition frequency, duty cycle, cutting speed and auxiliary gas pressure on cutting depth of InP wafer, the results show that there was an approximate inverse relationship between cutting depth and repetition frequency, approximate inverse relationship to cutting speed, approximately proportional to duty cycle, and the auxiliary gas pressure has little effect on cutting depth. The optimal parameters of kerr width was obtained through orthogonal experimental design, when the repetition frequency equals to 200 kHz, the duty cycle 10%, the cutting speed 300mm/s, the pressure 0.2 MPa, the minimum kerf width reaches 6.2 p.m. After comprehensive analysis of the relationship between laser process parameters and auxiliary process and passing rate of splitting, which reaches 98% for InP wafer.

关 键 词：紫外激光 磷化铟 晶圆 切割 裂片合格率 

分 类 号：TG485[金属学及工艺—焊接]