128×128元InAs/GaSb Ⅱ类超晶格红外焦平面探测器  

128×128 infrared focal plane arrays based on Type-Ⅱ InAs/GaSb superlattice

作　　者：许佳佳[1] 金巨鹏[1,2] 徐庆庆[1] 徐志成[1,2] 靳川[1,2] 周易[1] 陈洪雷[1] 林春[1] 陈建新[1] 何力[1] 

机构地区：[1]中国科学院红外成像材料与器件重点实验室,中国科学院上海技术物理研究所,上海200083 [2]中国科学院研究生院,北京100049

出　　处：《红外与毫米波学报》2012年第6期501-504,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(61176082)~~

摘　　要：报道了128×128元InAs/GaSb Ⅱ类超晶格红外焦平面阵列探测器的研究成果.实验采用分子束外延技术在GaSb衬底上生长超晶格材料.红外吸收区结构为13 ML(InAs)/9 ML(GaSb),器件采用PIN结构,焦平面阵列光敏元大小为40μm×40μm.通过台面形成、侧边钝化和金属电极生长,以及与读出电路互连等工艺,得到了128×128面阵长波焦平面探测器.在77 K时测试,器件的100%截止波长为8μm,峰值探测率6.0×109cmHz1/2W-1.经红外焦平面成像测试,探测器可得到较为清晰的成像.In this paper,we reported the growth and fabrication of a 128×128 infrared focal plane array detector made of type-Ⅱ InAs/GaSb superlattice.The superlattice structure was grown on GaSb substrate using molecular beam epitaxy（MBE） technology.It consisted of 200 periods of 13ML（InAs）/9ML（GaSb） for longwave infrared detection.The pixel of the detector had a conventional PIN structure with a size of 40 μm×40 μm.The device fabrication process consisted of mesa etching,side-wall passivation,metallization and flip-chip hybridization with readout integrated circuit（ROIC）.At 77 K,the detector had a 100% cut-off wavelength of 8.0 μm,and a peak detectivity of 6.0×109 cmHz1/2W-1.Concept proof of infrared imaging was also demonstrated with the focal plane array at liquid nitrogen temperature.

关 键 词：长波红外探测器 InAs GASB Ⅱ类超晶格 焦平面阵列 

分 类 号：TN304.2[电子电信—物理电子学] TN305