基于AlGaN/GaN HEMT结构的氢气传感器  

Development of Hydrogen Sensor Based on AlGaN/GaN High Electron Mobility Transistor Structure

作　　者：郭智博[1] 汪莱[1] 郝智彪[1] 罗毅[1] 

机构地区：[1]清华信息科学与技术国家实验室(筹)/集成光电子学国家重点实验室清华大学电子工程系,北京100084

出　　处：《真空科学与技术学报》2012年第12期1089-1092,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家重点基础研究发展计划(2011CB301902;2011CB301903);国家高技术研究发展计划(2011AA03A112);国家自然科学基金项目(60723002;50706022;60977022;51002085);北京市自然科学基金重点项目(4091001);深圳市产学研和公共科技专项资助项目(08CXY-14)资助的课题

摘　　要：制作了栅极修饰金属Pt的AlGaN/GaN高电子迁移率晶体管结构的氢气传感器。栅极Pt采用溅射的方法制作,主要起到形成肖特基接触并催化氢气裂解的作用。器件的栅极敏感区域尺寸为5μm×400μm,对常温下氢气浓度为2×10-6至6216×10-6的氢气/氮气混合气进行了检测。结果表明,在VGS=-1.5 V,VDS=1 V的工作偏压下,10倍的氢气浓度变化平均引起33.9%的灵敏度变化量。同时,器件对2×10-6的氢气具有6.3%的灵敏度,表现出了具有竞争力的低浓度检测极限。A novel type of hydrogen sensors was developed, based on the AlGaN/GaN high electron mobility transistor （HEMT） structure with Pt-decorated gate. The sputtered Pt-gate acts as the Schottky contact, and catalyzes dissociation of molecular hydrogen. The sensing area of the Pt gate covers 5 μm×400 μm, and its sensing c ＇haracteristics were evaluated with a mixture of hydrogen and nitrogen, with hydrogen concentration varying from 2×10- 6 to 6216 ×10- 6. The results show that an increase of hydrogen concentration by one order of magnitude changes the average sensitivity of the sensor by 33.9% ,when biased at VGS = - 1.5 V and VDS = 1.0 V. The fact that its sensitivity is 6.3% at 2×10-6 of hydrogen shows that it outperforms the conventional hydrogen sensors when it comes to the low detection limit of hydrogen.

关 键 词：ALGAN GAN高电子迁移率晶体管 氢气传感 灵敏度 恢复特性 

分 类 号：TN386.3[电子电信—物理电子学]