Optimal quantum well width and the effect of quantum well position on the performance of transistor lasers  

作　　者：Md. Ahsan Habib Subrata Das Saeed Mahmud Ullah Shahida Rafique 

机构地区：[1]Department of Electronics and Communication Engineering, University of Information Technology and Sciences [2]Department of Applied Physics, Electronics and Communication Engineering University of Dhaka

出　　处：《Optoelectronics Letters》2013年第1期18-20,共3页光电子快报（英文版）

摘　　要：Transistor laser (TL) model based on InGaP/GaAs/InGaAs/GaAs is analyzed and presented. It is realized that quantum well (QW) with width of 10 nm may be formed for low base threshold current density J th . The emission wavelength is found to be 1.05 μm, and the indium (In) composition is 0.25 for optimal QW width. It is identified that J th decreases with the movement of QW towards the base-emitter (B-E) interface. Small signal optical response is calculated, and the effect of QW position is studied. The bandwidth is enhanced due to the movement of the QW towards the emitter base junction.Transistor laser （TL） model based on lnGaP/GaAs/lnGaAs/GaAs is analyzed and presented. It is realized that quantum well （QW） with width of 10 nm may be formed for low base threshold current density Jth＂ The emission wavelength is found to be 1.05 gin, and the indium （In） composition is 0.25 for optimal QW width. It is identified that Jth decreases with the movement of QW towards the base-emitter （B-E） interface. Small signal optical response is calculated, and the effect of QW position is studied. The bandwidth is enhanced due to the movement of the QW towards the emitter base junction.

关 键 词：量子阱 激光器 晶体管 宽度 位置 性能 阈值电流密度 发射波长 

分 类 号：TN248[电子电信—物理电子学] O471.1[理学—半导体物理]