SiO_2阻挡层对直流磁控溅射制备AZO薄膜性能的影响  

Effects of SiO_2 Buffer Layer on the Properties of AZO Thin Films Grown by DC Magnetron Sputtering

作　　者：李林娜[1] 

机构地区：[1]天津开发区职业技术学院,天津300457

出　　处：《人工晶体学报》2012年第6期1696-1699,1704,共5页Journal of Synthetic Crystals

基　　金：天津开发区职业技术学院技术服务与开发基金项目(TEDAPT12-07)

摘　　要：在AZO薄膜制备温度下,浮法玻璃衬底中的杂质可能会引入"掺杂"效应而导致薄膜迁移率的降低。为了提高薄膜的迁移率,增加载流子在薄膜中的输运能力,本实验提出SiO2/AZO复合薄膜制备技术。SiO2薄膜与普通玻璃相比,具有纯度高、透过率高的特点,本实验通过SiO2/AZO复合结构提高薄膜的迁移率。采用SiO2/AZO复合结构溅射制备AZO薄膜,使薄膜的载流子迁移率由19.8 cm2.V-1.s-1提高到57.1 cm2.V-1.s-1。The substrate temperature during sputtering AZO thin films,the impurity in the float glass substrates may introduce doped effect and lead to reduce the mobility of AZO thin films.In order to improve mobility of AZO thin films and to increase the transport capacity of carriers in the films,in this experiment,we tried to use SiO2/AZO compound thin films preparation technology.Compared with float glasses,SiO2 films have the characteristic of high purity and high optical transmission.The mobility of SiO2/AZO composite structure thin films has been increased from 19.8 cm2·V-1·s-1 to 57.1 cm2·V-1·s-1.

关 键 词：AZO薄膜 阻挡层 迁移率 

分 类 号：O484[理学—固体物理]