Transconductance bimodal effect of PDSOI submicron H-gate MOSFETs  

作　　者：梅博 毕津顺 卜建辉 韩郑生 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2013年第1期39-44,共6页半导体学报（英文版）

摘　　要：A bimodal effect of transconductance was observed in narrow channel PDSOI sub-micron H-gate PMOSFETs,which was accompanied with the degeneration of device performance.This paper presents a study of the transconductance bimodal effect based on the manufacturing process and electrical properties of those devices.It is shown that this effect is caused by a diffusion of donor impurities from the NC region of body contact to the PC poly gate at the neck of the H-gate,which would change the work function differences of the polysilicon gate and substrate.This means that the threshold voltage of the device is different in the width direction,which means that there are parasitic transistors paralleled with the main transistor at the neck of the H-gate.The subsequent devices were fabricated with layout optimization,and it is demonstrated that the bimodal transconductance can be eliminated by mask modification with NC implantation more than 0.2 m away from a poly gate.A bimodal effect of transconductance was observed in narrow channel PDSOI sub-micron H-gate PMOSFETs,which was accompanied with the degeneration of device performance.This paper presents a study of the transconductance bimodal effect based on the manufacturing process and electrical properties of those devices.It is shown that this effect is caused by a diffusion of donor impurities from the NC region of body contact to the PC poly gate at the neck of the H-gate,which would change the work function differences of the polysilicon gate and substrate.This means that the threshold voltage of the device is different in the width direction,which means that there are parasitic transistors paralleled with the main transistor at the neck of the H-gate.The subsequent devices were fabricated with layout optimization,and it is demonstrated that the bimodal transconductance can be eliminated by mask modification with NC implantation more than 0.2 m away from a poly gate.

关 键 词：TRANSCONDUCTANCE threshold voltage work function SILICON-ON-INSULATOR 

分 类 号：TN386[电子电信—物理电子学]