硅各向异性腐蚀技术研究  

Studies on Anisotropic Etching of Si

作　　者：李倩[1] 崔鑫[1] 李湘君[1] 

机构地区：[1]中国电子科技集团公司第四十七研究所,沈阳110032

出　　处：《微处理机》2012年第6期12-13,19,共3页Microprocessors

摘　　要：针对两种补偿结构探讨了硅的凸角腐蚀补偿原理,设计了补偿版图,并在KOH腐蚀液中进行实验验证,获得了好的直角凸面补偿效果。The principle of compensation based on two compensation structures was discussed in this paper, and the graphics of compensation was designed and experimented with KOH etchant compensation effect of the convex corner according well with expected.

关 键 词：氢氧化钾 湿法腐蚀 凸角补偿 

分 类 号：TN305[电子电信—物理电子学]