管式PECVD射频功率对氮化硅薄膜性能的影响  

Influence of Tube PECVD Radio Frequency Power on Silicon Nitride Thin Film

作　　者：任现坤 马玉英[2] 张黎明 刘鹏 姜言森 程亮 徐振华 贾河顺 张春艳 

机构地区：[1]山东力诺太阳能电力股份有限公司,济南250103 [2]山东凯文科技职业学院,济南250200

出　　处：《半导体光电》2012年第6期853-855,862,共4页Semiconductor Optoelectronics

基　　金：国家"863"计划重点项目(2012AA050303;2011AA050504);山东省自主创新成果项目(2010ZHZX1A0702;2011ZHZX1A0701)

摘　　要：氮化硅薄膜作为传统的晶体硅太阳电池钝化减反膜,其性能的变化直接影响电池的转化效率。通过改变管式PECVD的射频功率,制备了不同膜厚和折射率的氮化硅薄膜,并分别进行了薄膜致密性以及硅片镀膜后少子寿命的测试。实验及测试结果表明,改变PECVD的射频功率对氮化硅薄膜的沉积速率及其薄膜的性能有重要影响。As a transitional passivation and anti-reflection method on c-Si solar cells,the performance of Silicon nitride film directly affects the conversion efficiency of the cells.In this article silicon nitride films with different thickness and refractive indexes were prepared by changing the radio frequency power of the tube PECVD furnace,also the minority carrier lifetime and the film density were monitored.Experiments and test results show that,the RF power of PECVD has great impact on the deposition rate and properties of the silicon nitride film.

关 键 词：氮化硅 转化效率 射频功率 致密性 少子寿命 

分 类 号：TN304.054[电子电信—物理电子学]