当代电子学的标志——真空微电子学  

Landmark of Current Electronics: Vacuum Microelectronics

作　　者：苏世民[1] 

机构地区：[1]机电部第13研究所,石家庄050051

出　　处：《半导体情报》1991年第5期29-38,45,共11页Semiconductor Information

摘　　要：本文概述了真空微电子学的基本原理、特性、用途及发展现状。现在真空场发射三极管高频电压增益可做到11dB,跨导为38μS。预计真空微三极管的频率可达3GHz以上。指出,新研制的真空微电子微带放大器在35～1000GHz(1THz)频段下输出功率可达1～50W。This paper briefly describes the primary principle, characteristics, applications and developing status of vacuum microelectronics. The vacuum field emission triodes now provi- de RF voltage gain of about 11dB, with 38μS transconductance. It is estimated the frequency of vacuum microtriodes will pro- bably get to above 3GHz. The paper also indicates that 1～50W output power will be obtained for the nearly developed micro- strip amplifier employing mieroelectronic technology at frequen- cies potentially up to 1THz.

关 键 词：真空微电子学 微电子技术 真空器件 

分 类 号：TN4[电子电信—微电子学与固体电子学]