Ge/Si超晶格喇曼谱研究  

Raman Spectra Investigation on Ge/Si Superlattices

作　　者：金鹰 张树霖 秦国刚 盛篪[2] 周铁城 

机构地区：[1]大学物理系,北京100871 [2]复旦大学表面物理实验室,上海200433

出　　处：《Journal of Semiconductors》1991年第3期188-192,共5页半导体学报（英文版）

摘　　要：我们用喇曼光散射的方法,观察了应变层超晶格的折迭声学声子,从而验证了材料的超晶格多层结构.将实验中观察到的频率和理论计算值进行比较表明,所研究样品的标称值和喇曼实验是基本相符合的.根据光学限制模的频率移动,估算了超晶格样品中Ge层和Si层的应变分布.We have observed the folded longitudinal acoustical phonons (FLA) of Ge/Si superlat-tices. The existence of the FLA indicates that the samples studied are of the superlattice stru-cture.By comparing the observed frequencies of FLA with the calculated ones, we come tothe conclusion that the nominal values of the structrue parameters for the samples used areapproximately consistent with the actual ones.The distribution of the strain in sample R3is estimated from the observed frequency shifts of confined optical phonons.

关 键 词：喇曼散射 超晶格 散射谱 GE/SI 

分 类 号：O471.4[理学—半导体物理]