反熔丝FPGA电路瞬时电离辐射效应及加固设计  

Transient Ionizing Radiation Effects and Hardened Design of Antifuse-based FPGA Circuit

作　　者：杜川华[1] 詹峻岭[1] 许献国[1] 袁国火[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《核电子学与探测技术》2012年第11期1247-1250,共4页Nuclear Electronics & Detection Technology

摘　　要：针对反熔丝FPGA电路,在"强光一号"加速器上进行了瞬时电离辐射试验,发现γ射线瞬时电离辐射会导致FPGA内部寄存器清零,使FPGA运行状态被初始化。为了解决该问题,设计了一种"FPGA+FRAM(铁电存储器)+特殊时序读写软件"的加固电路,通过γ射线瞬时电离辐射试验证明:该加固电路实现了瞬时电离辐射状态下FPGA内部重要数据的实时保存与恢复,成功规避了FPGA电路的瞬时电离辐射效应。The γ transient Ionizing radiation effects of Antifuse- based FPGA Circuit were investgated using ＂Qiangguang - I ＂ accelerator. It was detected that γ transient Ionizing radiation result in FPGA registers were reset. So, in order to resolve the problem, the especial hardened antifuse - based FPGA circuit was designed, that comprises FPGA, FRAM and especial read - write soft . The transient Ionizing radiation experiment data proved that the design was successful in achieving the FPGA information saving and resume , avoiding γ transient radiation effects.

关 键 词：反熔丝现场可编程门阵列 Γ射线 瞬时电离辐射效应 铁电存储器 信息保存与恢复 

分 类 号：TN47[电子电信—微电子学与固体电子学]