硅中磷的基态分裂的PTIS谱研究  

Study of Ground Splitting of P in n-type Si by PTIS

作　　者：胡灿明[1] 黄叶肖[1] 沈学础[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家实验室,上海200083

出　　处：《Journal of Semiconductors》1991年第6期332-337,共6页半导体学报（英文版）

摘　　要：本文报道掺磷浓度为10^(13)cm^(-3)的N型Si中磷杂质基态分裂的PTIS光谱实验结果,精确测定了P的基态分裂值为6△_c=12.95meV;通过计算P的基态布居数随温度的变化,得到了不同基态跃迁谱线相对强度与温度的关系,结果与实验吻合.We report the experimental results of photothermal ionization spectra of the splittingground state of phosphorus,in n-type Si sample with Phosphorus concentration of the order of10^(13) cm^(-3).The value of the ground splitting is accurately determined as 6△c=12.95meV; Bycalculating the temperature dependence of carrier populations in different ls states,we get thetemperature dependence of the relative intensity of lines from different ls states to the sameexcited states.The results are in agreement with the experiment.

关 键 词：光热电离光谱 半导体 杂质 硅 掺磷 

分 类 号：TN304.12[电子电信—物理电子学]