溅射工艺对SiCN薄膜沉积及光性能的影响  

Influence of Sputtering Process on the Deposition and Optical Properties of SiCN Films

作　　者：肖兴成[1] 宋力昕[1] 江伟辉[1] 彭晓峰[1] 胡行方[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海200050

出　　处：《无机材料学报》2000年第4期717-721,共5页Journal of Inorganic Materials

摘　　要：本文利用射频磁控溅射工艺制备了ＳｉＣＮ薄膜，研究了基本工艺参数如溅射功率、Ｎ分压对薄膜沉积和光学性能的影响．研究结果表明：溅射制备的薄膜中形成了复杂的网络结构，膜中三元素Ｓｉ、Ｃ和Ｎ两两之间形成了共价键．Ｎ分压的提高降低了薄膜的沉积速率．Ｎ流量的提高使光学带隙增大．溅射功率的提高使薄膜的沉积速率提高，但使得光学带隙减小．SiCN films were prepared by RF magnetron sputtering with SiC target. The influences of the basic process parameters, such as the deposition power and partial pressure of nitrogen, on the deposition rate and optical properties were studied. XPS and FTIR results revealed the formation of a complex network among Si, C and N. The deposition rate decreased with increasing partial pressure of nitrogen. The increase of N flux resulted in wider optical gap. The higher the deposition power, the higher the deposition rate and the narrower the optical band gap.

关 键 词：SiCN薄膜 磁控溅射 FTIR 光学带隙 半导体 

分 类 号：O484[理学—固体物理] TN304.055[理学—物理]