直流磁控反应溅射制备IrO_2薄膜  

IrO_2 Thin Films Deposited by DC Magnetron Sputtering Method

作　　者：王世军[1] 丁爱丽[1] 仇萍荪[1] 何夕云[1] 罗维根[1] 

机构地区：[1]中国科学院上海硅酸盐研究所无机功能材料开放实验室,上海200050

出　　处：《无机材料学报》2000年第4期733-739,共7页Journal of Inorganic Materials

摘　　要：为研究氧化依（ＩｒＯ_２）对ＰＺＴ铁电薄膜疲劳性能的影响，利用直流（ＤＣ）磁控反应溅射（ｓｐｕｔｔｅｒｉｎｇ）工艺成功地在ＳｉＯ_２／Ｓｉ（１００）衬底上制得了高度取向的ＩｒＯ_２薄膜．并在其上制成ＰＺＴ铁电薄膜．讨论了溅射参数（溅射功率、 Ａｒ／Ｏ_２比、衬底温度）以及退火条件对氧化铱薄膜的结晶、取向和形态的影响．Iridium oxide (IrO_2) thin films were successfully grown on SiO2/Si(100) substrate by a DC magnetron reactive sputtering method with an Ir target(99.9% purity). PZT ferroelectric thin films were deposited by a sol-gel method. The as-deposited thin films were annealed with a thermal annealing process, after that the films were highly directed at (110) or (200). The effect of sputtering parameters such as gun power, oxygen partial pressure (Ar/O_2) and growth temperature and annealing conditions on the crystalline nature and morphology of IrO_2 thin films was discussed.

关 键 词：氧化铱 直流磁控反应溅射 铁电薄膜 电容器 电极 

分 类 号：O484[理学—固体物理] TM22[理学—物理]