GaAs/AlGaAs多量子阱室温光电流谱  

Room-temperature Photoeurrent Spectroscopy of GaAs/GaAlAs Multiple Quantum Wells

作　　者：段海龙 王启明[1] 吴荣汉[1] 曾一平[1] 孔梅影[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》1991年第7期399-404,共6页半导体学报（英文版）

摘　　要：通过对室温光电流谱的测量,研究了电场对多层量子阱结构中激子吸收行为的影响,分析了不同MQW材料的吸收谱的电场效应及有关光电子器件对材料的要求.By means of room-temperature photocurrent Spectroscopy, we have studied the effect ofelectric field on the exciton absorption in GaAs/GaAlAs multiple quantum wells and have dis-cussed the effect of electric field on the photocurrent spectra for some kinds of MQW struc-tures.The requirement of the related optoelectric devices for the MQW materials is also dis-cussed.

关 键 词：GAAS/ALGAAS 量子阱 光电流谱 测量 

分 类 号：O471.1[理学—半导体物理]