SiC半导体探测器性能测量研究  

Properties Measurement of Silicon Carbide Detector

作　　者：蒋勇[1,2] 范晓强[1] 荣茹[1] 吴建[1] 柏松[3] 李理[3] 

机构地区：[1]中国工程物理研究院核物理与化学研究所,四川绵阳621900 [2]四川大学原子与分子物理研究所,四川成都610065 [3]南京电子器件研究所单片集成电路和模块国家级重点实验室,江苏南京210016

出　　处：《核电子学与探测技术》2012年第12期1372-1375,1427,共5页Nuclear Electronics & Detection Technology

基　　金：中国工程物理研究院科学技术发展基金资助项目(2012B0103005);国家自然科学基金资助项目(11205140)

摘　　要：采用241Am-α粒子源测量了研制的SiC半导体探测器的上升时间、脉冲幅度以及能量分辨率等性能,计算了空气和肖特基Ni/Au层厚度对α粒子的能量损失,测量了抽真空和加不同偏压等条件对SiC探测器性能的影响。计算表明:0.8 cm的空气层对α粒子有20%的能量损失,3.5μm的肖特基Au层对α粒子有39%的能量损失。在1 700 Pa的低真空环境中、350 V偏压下SiC探测器达到最佳工作条件,此时探测器的上升时间为76.9 ns,输出幅度为22.8 mV,能量分辨率为13.7%。采用更薄肖特基金属镀层(≤0.1μm)可制备出更高能量分辨率的SiC探测器。Risetime, pulse height and energy resolution Properties of silicon carbide detector are measured using the UlAm - alpha- particle. Calculations of the energy straggling in the atmosphere between SiC detector and ut Am - alpha - particle, and entrance Au window, were carried out with the Bragg expressions. Energy strag- gling in the 0.8 centimeter atmosphere layer is 20%, and in the 3.5 μm entrance Au window is 39%. Rise- time of 76.9 ns, pulse height of 22.8 mV and energy resolution of 13.7% are observed with the SiC detector, which is in the optimization condition with vacuum of 1700 Pa and reverse bias of 350 volt. Fabrication of SiC detectors with schottky contact thicknesses less than 0.1 μm appears to be possible, and with such detectors, the possibility that the energy resolution that can be achieved with SiC may surpass that of silicon can not be ex- cluded.

关 键 词：SiC探测器 宽禁带 Α粒子 能量分辨率 

分 类 号：TL814[核科学技术—核技术及应用]