In_(0.17)Al_(0.83)N在碱性溶液中的化学湿法腐蚀行为研究  

Wet Etching Behavior Studies of In_(0.17)Al_(0.83)N in Alkali Solutions

作　　者：邢东[1] 冯志红[1] 王晶晶[1] 刘波[1] 尹甲运[1] 房玉龙[1] 

机构地区：[1]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2013年第2期118-121,共4页Semiconductor Technology

摘　　要：介绍了In0.17Al0.83N在质量分数10%的四甲基氢氧化铵(TMAH)碱性溶液中的腐蚀行为实验研究。通过扫描电子显微镜(SEM)和原子力显微镜(AFM)观察腐蚀样品,发现其腐蚀机理是起源于晶体中线位错缺陷的侧向腐蚀。这是由于线位错在In0.17Al0.83N晶体表面的交汇处与周围晶体相比,具有较高的化学不稳定性,容易被腐蚀,形成缺陷腐蚀坑。随着腐蚀的进一步发生,暴露在腐蚀液中的腐蚀坑侧壁,更容易受到腐蚀,造成了以侧向腐蚀为主的腐蚀。AFM和SEM观察到的大多数腐蚀坑是与InAlN晶体中的螺位错、刃位错或混合位错有关。这种腐蚀方法适合在宽禁带半导体制造中以InAlN为牺牲层的工艺上应用。The etching behavior of In0.17Al0.83N in 10% TMAH solutions was introduced. SEM and AFM images show that the mechanism of the InA1N etch is mainly the lateral etching, originated from threading dislocations in the In0.17Al0.83N layer. The points at which dislocations intersect the surface of InA1N are easily attacked by the etehant due to the higher chemical instability than that of the surrounding perfect crystals, which results in formation of etch pits. Through further etching, the vulnerable sidewalls of the pits were attack correlated with screw dislocations for processing technologies of the layer ed by the etchant. Most etch pits in AFM and or edge dislocations or mixed dislocations. The etch wideband gap semiconductors with the InA1N as the SEM images were method is suitable sacrificed layer

关 键 词：In0.17Al0.83N 湿法腐蚀行为 碱性溶液 线位错 牺牲层 

分 类 号：TN304.26[电子电信—物理电子学]