HEMT太赫兹探测器响应度和NEP的检测与分析  

Detection and Analysis of the Responsivity and NEP for HEMT Terahertz Detectors

作　　者：杨昕昕[1] 孙建东[1] 秦华[1] 

机构地区：[1]中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室,江苏苏州215123

出　　处：《微纳电子技术》2013年第2期69-73,99,共6页Micronanoelectronic Technology

基　　金：国家自然科学基金项目(61271157;11074280);国家重点基础研究发展计划(973计划)资助项目(G2009CB929303);中国科学院知识创新工程重要方向项目(Y0BAQ31001;KJCX2-EW-705);中国工程物理研究院太赫兹科学技术基金项目(CAEPTHZ201205)

摘　　要：在0.8～1.1 THz内,对AlGaN/GaN高电子迁移率晶体管(HEMT)太赫兹探测器的响应度和噪声等效功率进行了具体测试和分析。在太赫兹波辐射下,HEMT太赫兹探测器源漏端产生能被栅压灵敏调控的直流光电流。该型探测器在300 K和77 K下的电流响应度分别为83 mA/W和4.1 A/W,电压响应度分别为4 kV/W和50 kV/W,噪声等效功率分别达到22 pW/Hz0.5和1 pW/Hz0.5。采用两种较为典型的测量方法,通过对实验结果的比较,确定了影响该类型探测器的响应度和噪声等效功率的主要因素,并提出了增强响应度和降低噪声等效功率的具体措施。The responsivity and noise equivalent power （NEP） of the terahertz detectors based on the A1GaN/GaN high electron mobility transistor （HEMT） were tested and analyzed at 0.8 - 1.1 THz. Under the terahertz wave irradiation, the DC photocurrent sensitively modulated by the gate voltage was observed at the source-drain end of the HEMT terahertz detector. At 300 K and 77 K, the current responsivities are 83 mA/W and 4.1 A/W, the voltage responsivities are 4 kV/W and 50 kV/W, the noise equivalent powers are 22 pW/Hz0.5 and 1 pW/Hz0.5, respec- tively. Through two kinds of the typical measurement methods and the comparison of the experi- mental results, the main factors affecting the responsivity and noise equivalent power of the de- tector were identified, and the specific measures to enhance the responsivity and reduce the noise equivalent power were proposed.

关 键 词：太赫兹探测器 高电子迁移率晶体管(HEMT) ALGAN GAN 响应度 噪声等效功 率(NEP) 

分 类 号：TN382[电子电信—物理电子学]