UMG多晶硅片的少子寿命  

THE MINORITY CARRIER LIFETIME OF UMG POLYCRYSTALLINE SILICON WAFERS

作　　者：潘淼[1] 郑兰花[2] 武智平[1] 罗学涛[2] 陈文辉[2] 李锦堂[2] 陈朝[1] 

机构地区：[1]厦门大学物理系,福建省半导体照明工程技术研究中心,厦门361005 [2]厦门大学材料系,厦门361005

出　　处：《太阳能学报》2013年第1期45-49,共5页Acta Energiae Solaris Sinica

基　　金：福建省重大科技专项专题(2007HZ0005-2);国家自然科学基金(61076056);福建省经贸委资助项目

摘　　要：利用微波光电导衰减方法,研究磷吸杂、热氧化以及氮化硅钝化后快速热退火等工艺对物理冶金法制备的UMG硅片少子寿命的影响。实验发现:磷吸杂可有效改善冶金法硅片的少子寿命,其优化的条件是950℃处理4h;经热氧化处理后,少子寿命有所下降;氮化硅钝化后快速热退火处理可提高少子寿命,其优化的条件为800℃退火30s。The effect of phosphorus gettering, thermal oxidation and rapid thermal annealing （RTA） on the minori- ty carrier lifetime of upgraded metallurgical grade （UMG） silicon wafers by microwave photo-conductive decay were investigated. Results s.how that the phosphorus gettering is very effective in improving the minority carrier lifetime of UMG silicon wafers, and the best effect of phosphorus gettering has been achieved at 950℃, 4 hours. But the mi- nority carrier lifetime decreased after thermal oxidation. In the case of RTA, the minority carrier lifetime of passivated UMG silicon wafers by SiN~ is somewhat increase, the optimal conditions are 800℃, 30 seconds.

关 键 词：冶金法硅片 少子寿命 磷吸杂 热氧化 快速热处理 

分 类 号：TM914.41[电气工程—电力电子与电力传动]