半绝缘砷化镓及其MESFET器件光敏特性研究  

Study on the Photo Sensitivity of SI GaAs and MESFET

作　　者：郭小兵 周智慧 胡恺生 张绵[2] 

机构地区：[1]电子四十六所,天津300192 [2]电子十三所,石家庄050051

出　　处：《半导体情报》2000年第4期41-43,共3页Semiconductor Information

摘　　要：用波长范围为 70 0～ 3 5 0 0 nm的光电流测试系统研究了 SI-Ga As衬底及其 MESFET器件中的深能级。结果显示在 SI-Ga As衬底及其 MESFET器件中存在着相似的深能级 ,衬底的深能级影响着器件的光敏等性能。还讨论了如何减少器件中光敏现象的方法。Deep levels of substrate and MESFET device on SI GaAs have been studied using photocurrent spectroscopic system ranging from 700nm to 3500nm.It shows that there are close relationship between the deep levels of substrate and that of MESFET device.These deep levels have effect on the photosensitivity of device.How to reduce the photosensitivity in device is also discussed.

关 键 词：MESFET器件 光敏特性 半绝缘 砷化镓 

分 类 号：TN325.3[电子电信—物理电子学] TN386