MESFET和PHEMT大信号建模  

Large-Signal Modeling of MESFETs and PHEMTs

作　　者：高学邦[1] 

机构地区：[1]电子十三所,石家庄050051

出　　处：《半导体情报》2000年第4期44-51,共8页Semiconductor Information

摘　　要：分析了 MESFET和 PHEMT大信号建模的现状 ,提出了在 DC和脉冲两种状态下通用于 MESFET和 PHEMT的精确 I-V模型 ;提出了具有二维 C-V模型精度的一维C-V模型和负载线 S参数测量提取方法 ;提出了采用改进 Cold FET测量与提取技术进行管壳封装器件建模的方法。本文的大信号模型具有很好的数值收敛性和标准的等效电路。提出的模型精确地模拟了器件的 DC I-V、脉冲 I-V、偏置相关 S参数、 C-V特性和电路的功率、增益、效率以及线性特性 ,并用几个实例证实了其精度和通用性。The current status in the large signal modeling for MESFETs & PHEMTs is reviewed.An accurate and general I V model is presented,which is suitable for MES FETs & PHEMTs under both DC and pulse condition.A compact and general C V model is presented,which is accurate for both MESFETs & PHEMTs.An enhanced Cold FET method is used to model the packaged FET for the first time.The proposed model is well conditioned and based on the standard equivalent circuit.The new model accurately predicts the I V , C V ,bias depedent S parameters,power,efficiency and linearity characteristics for various devices and circuits.Several demonstration examples are also provided in this paper.

关 键 词：建模 信号 MESFET PHEMT 

分 类 号：TN402[电子电信—微电子学与固体电子学]