双极晶体管不同脉宽γ剂量率效应研究  

Transient Response of Transistors to Ionizing Radiation with Different Pulse Widths

作　　者：王桂珍[1] 姜景和[1] 彭宏论[1] 常东梅[1] 郭红霞[1] 杨海帆[1] 

机构地区：[1]西北核技术研究所,陕西西安710020

出　　处：《微电子学》2000年第4期247-249,253,共4页Microelectronics

摘　　要：介绍了晶体管在脉冲γ辐射源辐照下光电流的产生机理、测量方法，以及二次光电流与晶体管结构、γ剂量率和γ波形宽度的关系。在现有的实验条件下（四种γ脉冲辐射源，宽度分别为：～２ｎｓ，～２０ｎｓ，～６０ｎｓ，～１００ｎｓ，剂量率为１０５～１０６Ｇｙ／ｓ），对三种晶体管进行了辐照，对其等效关系进行了分析，得到了二次光电流与总剂量基本成线性关系的结论。Generation mechanism of the photocurrent of transistors irradiated by γ-pulse radiation with different width is described. Techniques for measurement of the photocurrent are discussed. The relationship of secondary photocurrent with the transistor structure, γ-dose rate and γ pulse width is dealt with. Radiation test is made on three types of transistors. It has been shown that the secondary photocurrent is strongly influenced by the lifetime of minority carrier and the width of γ-pulse and γ-dose rate.

关 键 词：脉冲γ源 双极晶体管 辐射效应 γ剂量率效应 

分 类 号：TN322.8[电子电信—物理电子学]