SiC过渡层对氟化类金刚石薄膜附着特性的影响  

Influence of SiC intermediate layer on adhesion property of F-DLC film

作　　者：潘越[1] 赵强[1] 江舸[2] 周杨[1] 江美福[1] 杨亦赏[1] 

机构地区：[1]苏州大学物理科学与技术学院,苏州215006 [2]四川大学物理科学与技术学院,成都610065

出　　处：《物理学报》2013年第1期293-298,共6页Acta Physica Sinica

摘　　要：采用射频反应磁控溅射法在316L不锈钢基片上分别沉积了两种薄膜:一种是氟化类金刚石薄膜(F-DLC),另一种是先镀上一定厚度的SiC过渡层再沉积F-DLC.着重研究了薄膜的附着力随过渡层制备条件的变化规律.结果显示,增加SiC过渡层后薄膜的附着力明显增加,且附着力随SiC过渡层的制备条件有所变化,在射频输入功率为200W,沉积时间5min制备出的SiC过渡层上再沉积F-DLC时,附着力可达8.7N,远高于未加过渡层时F-DLC膜的附着力(4N).通过研究SiC的沉积速率曲线、表面形貌和红外光谱,探讨了SiC过渡层及其制备条件影响薄膜附着力的相关机制.Two kinds of films are deposited on 316L stainless steel substrates by radio frequency reactive magnetron sputtering technique. One is fluorinated diamond-like carbon film （F-DLC） deposited on the 316L stainless steel substrate directly and the other is F-DLC with SiC intermediate layer. This paper focuses on the changing regulation of film adhesion with preparation condition. As the result, the adhesion of fluorinated diamond-like carbon film with SiC intermediate layer is obviously much better than that of F-DLC, and the adhesion is dependent on preparation condition of preparation SiC intermediate layer. The adhesion of F-DLC can reach 8.7 N with 200 W RF input power and 5 min deposition time, which is much bigger than the adhesion of F-DLC without intermediate layer （4 N）. The mechanism of the preparation condition of SiC influencing the adhesive force of F-DLC is studied by investigating the deposition rate curve, surface morphology and infrared spectrum.

关 键 词：F-DLC SiC过渡层 红外光谱 附着力 

分 类 号：O484.1[理学—固体物理]